Title of article
Growth and electronic structure of vanadium on α-Al2O3(0001)
Author/Authors
Biener، نويسنده , , J. and Bنumer، نويسنده , , M. and Madix، نويسنده , , R.J. and Liu، نويسنده , , P. and Nelson، نويسنده , , E. and Kendelewisz، نويسنده , , T. and Brown Jr.، نويسنده , , G.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2000
Pages
11
From page
50
To page
60
Abstract
The interaction of metallic vanadium with the α-Al2O3(0001) surface was studied in the submonolayer-to-multilayer coverage regime using X-ray photoemission spectroscopy (XPS) and near-edge X-ray absorption fine structure (NEXAFS). At low coverage the V 2p photoemission spectra reveal a strong interaction of vanadium with alumina, thus indicating the formation of a vanadium oxide. The NEXAFS data, both the line-shape and the position of the vanadium L-edge, are consistent with the formation of V2O3. A comparison of the results of both spectroscopies reveals that vanadium seems to be highly dispersed at low coverage, and final state effects on the core level ionization energies, e.g. cluster size effects, have to be considered. At higher amounts of vanadium deposition a metallic vanadium overlayer forms on top of a vanadia/Al2O3 interface. In an ambient of 5×10−5 Torr oxygen metallic vanadium oxidizes rapidly, even at 300 K, and the formation of V2O3 is observed.
Keywords
Aluminium oxide , Amorphous thin films , growth , Single crystal surfaces , Synchrotron radiation photoelectron spectroscopy , vanadium , X-ray absorption spectroscopy
Journal title
Surface Science
Serial Year
2000
Journal title
Surface Science
Record number
1677906
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