Self-organized structure in Co thin film growth on c(2×2)-N–Cu(100) surfaces

Thin film growth of Co at room temperature is studied by scanning tunneling microscopy on a surface consisting of regularly arranged c(2×2)-N–Cu(100) square patches separated by a narrow and clean Cu surface. One monolayer (ML) thick Co grows selectively on the bare Cu surface in the early stage of Co deposition on the surface, and there forms a square lattice made of 1 ML thick Co wires on Cu. With increasing amount of Co deposition, 2 and 3 ML thick Co islands grow selectively at the intersection of the wires. Consequently, square arrays of Co small islands are formed that are interconnected by Co narrow wires. These are compared with Ni growth on the same surface, and discussion is made in terms of diffusion, sticking and crystal structures of the deposited metals on the surface.