Title of article :
Thermal desorption in the lattice gas model – H adsorbed on Si(1 0 0)
Author/Authors :
Yagi، نويسنده , , Y. and Kaji، نويسنده , , H. and Kakitani، نويسنده , , K. and Yoshimori، نويسنده , , A.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2001
Pages :
5
From page :
126
To page :
130
Abstract :
Thermal desorption rate in the lattice gas model has a diverging enhancement near saturation coverage, which is sometimes overlooked. It exists even for interacting adsorbates in the lattice gas model. This divergence disappears when there are adsorbed sites with slightly higher energies. An example, H/Si(1 0 0), is discussed in connection with this feature.
Keywords :
Models of non-equilibrium phenomena , Silicon , thermal desorption , hydrogen atom , Low index single crystal surfaces
Journal title :
Surface Science
Serial Year :
2001
Journal title :
Surface Science
Record number :
1678145
Link To Document :
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