Structural analysis of 6H–SiC(0 0 0 1) surface by RHEED rocking curves

Surface structures of 6H–SiC(0 0 0 1)3×3R30° and 3×3 reconstructions have been studied by rocking curves of reflection high energy electron diffraction (RHEED) intensities in one-beam condition. The 3×3R30° reconstruction is observed by annealing the Si pre-deposited specimen in the Si flux at 1030°C for 5 min. The 3×3 reconstructions is observed by annealing the Si pre-deposited specimen in the Si flux at 1000°C for 5 min and by successive annealing of the 3×3 surface in the Si flux at 940°C for 5 min. Normal components of atomic positions and layer densities are determined by analysis with RHEED dynamical calculations for the 3×3. For the 3×3 surfaces, we determined surface normal components of atomic positions for three possible structure models.