How Si(0 0 1)–4×3-In reconstruction improves the epitaxial quality of InSb films grown on Si(0 0 1) substrates

Direct growth of InSb on Si(0 0 1) substrate is difficult due to 19.3% mismatch between Si and InSb. However, we could grow high-quality InSb films on Si(0 0 1) substrates by predepositing a Si(0 0 1)–4×3-In reconstruction. The present report illustrates how the improvement in the growth is directly related to the 4×3 structure of the In reconstruction and its stability against Sb adsorption. These results clearly show that Sb adsorption does not replace the In(4×3) reconstruction below 300°C.