Monte Carlo simulation of recovery process after MBE growth on GaAs(1 0 0)

Surface recovery processes after terminating Ga supply of molecular beam epitaxial growth on GaAs(1 0 0) vicinal surfaces are studied by using a Monte Carlo simulation based on a solid-on-solid model. Temperature dependence, As/Ga flux ratio dependence and step orientation dependence during recovery are discussed. Most of the characteristic features of surface morphology during growth are preserved even after the recovery; surface morphology after recovery time of 6 s is reminiscent of that just after growth. During the recovery, As plays a prime role in determination of surface morphology and affects the kinetics of Ga. For connecting an As terminated island with another As terminated island or an As terminated step edge, Ga atoms migrate to fill in sites between the two regions.