Title of article
High resolution REM studies of Si(5 5 12) surfaces and their roughening phase transition
Author/Authors
Peng، نويسنده , , Y. and Suzuki، نويسنده , , T. and Minoda، نويسنده , , H. and Tanishiro، نويسنده , , Y. and Yagi، نويسنده , , K.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2001
Pages
9
From page
499
To page
507
Abstract
High resolution reflection electron microscopy has been applied to studies of a high index Si(5 5 12) surface at a sub-unit cell resolution. Lattice fringes with different widths were found to be directly corresponding to the subunits of the (5 5 12) surface. Defects on the surface were resolved as nano-facets with close orientation to (5 5 12). (13 13 31) and (7 7 17) facets were identified based on the subunit arrangement. An incommensurate structure (q=a*bk/2.43) was revealed at a temperature just below the roughening transition. Formation of an incommensurate structure as well as defects was discussed in terms of surface steps.
Keywords
Reflection electron microscopy (REM) , High index single crystal surfaces , Silicon
Journal title
Surface Science
Serial Year
2001
Journal title
Surface Science
Record number
1678250
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