Title of article :
High resolution REM studies of Si(5 5 12) surfaces and their roughening phase transition
Author/Authors :
Peng، نويسنده , , Y. and Suzuki، نويسنده , , T. and Minoda، نويسنده , , H. and Tanishiro، نويسنده , , Y. and Yagi، نويسنده , , K.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2001
Pages :
9
From page :
499
To page :
507
Abstract :
High resolution reflection electron microscopy has been applied to studies of a high index Si(5 5 12) surface at a sub-unit cell resolution. Lattice fringes with different widths were found to be directly corresponding to the subunits of the (5 5 12) surface. Defects on the surface were resolved as nano-facets with close orientation to (5 5 12). (13 13 31) and (7 7 17) facets were identified based on the subunit arrangement. An incommensurate structure (q=a*bk/2.43) was revealed at a temperature just below the roughening transition. Formation of an incommensurate structure as well as defects was discussed in terms of surface steps.
Keywords :
Reflection electron microscopy (REM) , High index single crystal surfaces , Silicon
Journal title :
Surface Science
Serial Year :
2001
Journal title :
Surface Science
Record number :
1678250
Link To Document :
بازگشت