Title of article
Non-empirical calculation of electronic states of impurity polygon in carbon sheet: 1, 2 and 3 pentagons
Author/Authors
Yamaguchi، نويسنده , , Tsuyoshi، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2001
Pages
7
From page
597
To page
603
Abstract
Electronic states of 1, 2 and 3 impurity pentagons in carbon sheet are calculated by the DV-Xα-LCAO method. The C atoms near the tail end are negatively charged and other C atoms are almost neutral. Both the occupied and unoccupied orbitals near the HOMO have high charge density around the central pentagon and tail end. This well reproduces the scanning tunneling microscopy images of 1 impurity pentagon. Furthermore, electronic states of 2 and 3 impurity pentagons in carbon sheet resemble those of fullerene molecule C60 adsorbed on Si(0 0 1)2×1 and Si(1 1 1)7×7 surfaces, respectively.
Keywords
Density functional calculations , carbon , Surface potential , Surface states , etc.) , Surface electronic phenomena (work function
Journal title
Surface Science
Serial Year
2001
Journal title
Surface Science
Record number
1678272
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