Title of article :
Thermal-dependent unoccupied electronic structure of a C60 monolayer film adsorbed on a Si(1 1 1)-(7×7) surface
Author/Authors :
Sakamoto، نويسنده , , Kazuyuki and Kondo، نويسنده , , Daiyu and Takeda، نويسنده , , Hideo and Sato، نويسنده , , Takanori and Suga، نويسنده , , Shigemasa and Matsui، نويسنده , , Fumihiko and Amemiya، نويسنده , , Kenta and Ohta، نويسنده , , Toshiaki and Uchida، نويسنده , , Wakio and Kasuya، نويسنده , , Atsuo، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2001
Pages :
6
From page :
604
To page :
609
Abstract :
We have measured the unoccupied electronic structures of a C60 monolayer film adsorbed on a Si(1 1 1)-(7×7) surface at 300 and 500 K, using inverse photoemission spectroscopy (IPES) and near edge X-ray absorption fine structure (NEXAFS). At 300 K, both IPES and NEXAFS spectra reveal that most of C60 molecules interact with the Si surface by van der Waals force at a coverage of 1.0 monolayer. After annealing the sample at 500 K, the full-width at half maximum of the unoccupied molecular orbitals becomes broader indicating the chemisorption at this temperature. Moreover, the NEXAFS spectrum shows the shift of the lowest unoccupied molecular orbital (LUMO) to the higher photon energy side and the decrease in intensity of the LUMO+1. These results suggest that the strong interaction induced at 500 K has a covalent character, to which the LUMO+1 contributes.
Keywords :
Inverse photoemission spectroscopy , Silicon , X-ray absorption spectroscopy , Fullerenes , Surface states , Surface electronic phenomena (work function , etc.) , Surface potential
Journal title :
Surface Science
Serial Year :
2001
Journal title :
Surface Science
Record number :
1678274
Link To Document :
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