Title of article :
Electronic structures of 3×3-Au/Si(1 1 1) surface
Author/Authors :
Murayama، نويسنده , , Misao and Nakayama، نويسنده , , Takashi and Natori، نويسنده , , Akiko، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2001
Abstract :
Band structure of the (3×3)R30°-Au/Si(1 1 1) surface is calculated by the ab initio pseudopotential method in a local density approximation. It is shown that the surface is semi-metallic; two bulk-Si valence bands and one Au–Si hybridized conduction band overlap slightly at the center of the Brillouine zone. We found three facts: Au trimers are located higher than the Si topmost layers, the charge redistribution occurs from d to s orbitals around Au due to strong electronic-state hybridization between Au and Si, and the formation of Au–Si bonds induces the charge transfer from Si to Au–Si bonds. All the facts cause the observed increases by Au adsorption of both the work function and the core-level binding energies of Au and Si.
Keywords :
Gold , Silicon , Surface potential , Surface states , Work function measurements , etc.) , Ab initio quantum chemical methods and calculations , Surface electronic phenomena (work function
Journal title :
Surface Science
Journal title :
Surface Science