Title of article
An STM study of Cu on Si(001) in the c(8×8) structure
Author/Authors
Liu، نويسنده , , B.Z. and Katkov، نويسنده , , M.V. and Nogami، نويسنده , , J.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2000
Pages
6
From page
137
To page
142
Abstract
We have studied the growth of Cu on the Si(001) surface over a range of growth temperatures and metal coverages. The only ordered phase seen by low energy electron diffraction (LEED), other than the 2×1 substrate pattern, was a c(8×8) phase which occurs at coverages as low as 0.05 monolayers. Scanning tunneling microscopy (STM) measurements show that the c(8×8) structure consists of an array of bright features, two per unit cell. We propose one possible atomic structure on the basis of the STM images.
Keywords
Copper , Scanning tunneling microscopy , Silicon , and topography , surface structure , morphology , Roughness
Journal title
Surface Science
Serial Year
2000
Journal title
Surface Science
Record number
1678848
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