A tight binding calculation of δ-doped quantum wells in Si

We present a tight binding (TB) calculation of the electronic structure of δ-doped quantum wells in Si. A self-consistent potential obtained in the Thomas–Fermi (TF) approximation is considered as an external potential in our semi-empirical TB model. A sp3s* basis is used and nearest neigbours are considered to treat the Si bulk crystal doped with B. We change the semi-empirical Hamiltonian matrix of (0 0 1) direction in each atomic layer, adding the value of the self-consistent external potential in this layer to all diagonal elements of the matrix. We compare the TB results with the results obtained in the envelope function approximation (EFA) and with the experimental data.