Title of article
Direct wide band gap material: a Hartree–Fock study of α-Be3N2
Author/Authors
Guadalupe Moreno Armanta، نويسنده , , Ma. and Reyes-Serrato، نويسنده , , Armando، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
6
From page
95
To page
100
Abstract
The ground state electronic structure of the beryllium nitride alpha phase has been investigated using the all-electron ab initio periodic Hartree–Fock (HF) approach, with a posteriori density-functional (DFT) correlation corrections. The computed HF lattice constant (8.144 Å) agrees with experiment (8.145 Å) and the calculations predict a bulk modulus of 2.52 Mbar and cohesive energy of 1.24 a.u./formula unit. The band gap is found to be direct of 4.43 eV at the Γ point, including corrections with DFT. This material might have application in the area of optoelectronics.
Keywords
Wide band gap , Beryllium nitride , Nitride , LCAO , Ab initio , Hartree–Fock theory , Direct band gap , Electronic structure
Journal title
Computational Materials Science
Serial Year
2001
Journal title
Computational Materials Science
Record number
1678981
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