• Title of article

    Direct wide band gap material: a Hartree–Fock study of α-Be3N2

  • Author/Authors

    Guadalupe Moreno Armanta، نويسنده , , Ma. and Reyes-Serrato، نويسنده , , Armando، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2001
  • Pages
    6
  • From page
    95
  • To page
    100
  • Abstract
    The ground state electronic structure of the beryllium nitride alpha phase has been investigated using the all-electron ab initio periodic Hartree–Fock (HF) approach, with a posteriori density-functional (DFT) correlation corrections. The computed HF lattice constant (8.144 Å) agrees with experiment (8.145 Å) and the calculations predict a bulk modulus of 2.52 Mbar and cohesive energy of 1.24 a.u./formula unit. The band gap is found to be direct of 4.43 eV at the Γ point, including corrections with DFT. This material might have application in the area of optoelectronics.
  • Keywords
    Wide band gap , Beryllium nitride , Nitride , LCAO , Ab initio , Hartree–Fock theory , Direct band gap , Electronic structure
  • Journal title
    Computational Materials Science
  • Serial Year
    2001
  • Journal title
    Computational Materials Science
  • Record number

    1678981