Title of article
Assessment of the minimal resistance path calculation technique for highly disordered 2D multitunnel devices
Author/Authors
Leroy، نويسنده , , Jale Cordan، نويسنده , , A.S and Goltzené، نويسنده , , A، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
7
From page
214
To page
220
Abstract
The Monte Carlo (MC) simulation of 2D geometrical disordered multitunnel junction arrays becomes cumbersome, when both array dimensions and temperature increase. It is therefore difficult to get statistical information on electrical parameters in the high temperature range. We have shown that a fair estimation of the electrical response of 2D disordered arrays can be obtained by taking only its minimal resistance path (MRP). In order to get a fair agreement with the straightforward MC simulation of the real 2D array, we use the real capacitance matrix to compute the charging energy. The net gain factor on the simulation time amounts to more than 25 for 5×5 arrays.
Keywords
Monte Carlo , Simulator , single-electron tunneling , Devices , 2D disordered , high temperature
Journal title
Computational Materials Science
Serial Year
2001
Journal title
Computational Materials Science
Record number
1679001
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