Title of article :
Assessment of the minimal resistance path calculation technique for highly disordered 2D multitunnel devices
Author/Authors :
Leroy، نويسنده , , Jale Cordan، نويسنده , , A.S and Goltzené، نويسنده , , A، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Pages :
7
From page :
214
To page :
220
Abstract :
The Monte Carlo (MC) simulation of 2D geometrical disordered multitunnel junction arrays becomes cumbersome, when both array dimensions and temperature increase. It is therefore difficult to get statistical information on electrical parameters in the high temperature range. We have shown that a fair estimation of the electrical response of 2D disordered arrays can be obtained by taking only its minimal resistance path (MRP). In order to get a fair agreement with the straightforward MC simulation of the real 2D array, we use the real capacitance matrix to compute the charging energy. The net gain factor on the simulation time amounts to more than 25 for 5×5 arrays.
Keywords :
Monte Carlo , Simulator , single-electron tunneling , Devices , 2D disordered , high temperature
Journal title :
Computational Materials Science
Serial Year :
2001
Journal title :
Computational Materials Science
Record number :
1679001
Link To Document :
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