Title of article :
Secondary ion emission processes of sputtered alkali ions from alkali/Si(100) and Si(111)
Author/Authors :
Kan، نويسنده , , T. and Mitsukawa، نويسنده , , K. and Ueyama، نويسنده , , T. and Takada، نويسنده , , M. and Yasue، نويسنده , , T. and Koshikawa، نويسنده , , T.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2000
Pages :
9
From page :
214
To page :
222
Abstract :
The secondary alkali ion yield vs. the work function change (Δφ) of Na, K and Cs/Si(100) and Si(111) was measured to discuss the details of secondary ion emission processes. In the case of alkali/metal systems, the secondary ion emission is explained by the electron tunneling model. In this model, the ionization of the ejected atom occurs as a result of electron resonant tunneling through the potential barrier separating an atom and a metal, and the secondary ion yield depends on exponentially the work function change of metal surface. For alkali/Si(100) systems, the secondary ion emission processes are explained in terms of the electron tunneling model since the secondary alkali ion yield vs. the work function change (Δφ) follows the exponential manner. However, it is not easy to apply the simple electron tunneling model to our experimental results for alkali/Si(111) systems. There is the essential difference in surface structures between Si(100) and Si(111). Therefore, it is suggested that the local electronic environment around the adsorbates might be taken into consideration for alkali/Si(111) systems.
Keywords :
sputtering , Surface states , etc.) , Surface electronic phenomena (work function , Work function measurements , alkali metals , Ion emission , Ion–solid interactions , Secondary ion mass spectroscopy , Silicon , Surface potential
Journal title :
Surface Science
Serial Year :
2000
Journal title :
Surface Science
Record number :
1679179
Link To Document :
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