Title of article
Combined atomistic and mesoscale simulation of grain growth in nanocrystalline thin films
Author/Authors
Haslam، نويسنده , , A.J. and Moldovan، نويسنده , , D. and Phillpot، نويسنده , , S.R. and Wolf، نويسنده , , D. and Gleiter، نويسنده , , H.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
18
From page
15
To page
32
Abstract
We have combined molecular-dynamics (MD) simulations with mesoscale simulations to elucidate the mechanism and kinetics of grain growth in nanocrystalline palladium with a columnar grain structure. The conventional picture of grain growth assumes that the process is governed by curvature-driven grain-boundary (GB) migration. Our MD simulations demonstrate that, at least in a nanocrystalline material, grain growth can also be triggered by the coordinated rotations of neighboring grains so as to eliminate the common GB between them. Such rotation–coalescence events result in the formation of highly elongated, unstable grains which then grow via the GB migration mechanism. These insights can be incorporated into mesoscale simulations in which, instead of the atoms, the objects that evolve in space and time are discretized GBs, grain junctions and the grain orientations, with a time scale controlled by that associated with grain rotation and GB migration and with a length scale given by the grain size. These mesoscale simulations, with physical insight and input materials parameters obtained by MD simulation, enable the investigation of the topology and long-time grain-growth behavior in a physically more realistic manner than via mesoscale simulations alone.
Keywords
Grain-boundary migration , grain rotation , atomistic simulation , Nanocrystalline materials , Multiscale simulation , Mesoscale simulation , grain growth
Journal title
Computational Materials Science
Serial Year
2002
Journal title
Computational Materials Science
Record number
1679213
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