Title of article
Molecular dynamics simulation of shearing deformation process of silicon nitride single crystal
Author/Authors
Ogata، نويسنده , , Shigenobu and Kitagawa، نويسنده , , Hiroshi and Hirosaki، نويسنده , , Naoto and Hatanaka، نويسنده , , Yoshinari and Umezu، نويسنده , , Takashi، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
9
From page
146
To page
154
Abstract
Shear deformation properties of α and β silicon nitride single crystals are investigated using the classical molecular dynamics (CMD) method. Four cases of shearing directions are analyzed, which were reported to be slip system on the basis of experimental observations. The simulation results show that shear deformation does not occur in one of the experimentally predicted slips (α – {1 1̄ 0 1} 〈1 1 2̄ 0〉). In this case the crystal is broken abruptly under shear deformation. In the case of the β crystal (β – {1 0 1̄ 0} 〈0 0 0 1〉), a sharp slip with edge dislocation can be found. The dislocation core width and speed are estimated. Finally one of the CMD results is compared with the corresponding first principle density functional calculation results, and it is shown that the validity about shearing CMD simulation of the 3-body interatomic potential was proposed by Vashishta.
Keywords
?-Silicon nitride , Slip system , Molecular dynamics , ?-Silicon nitride , Shear strength , Dislocation , 3-body potential , Computer simulation , Stress–strain curve , First principle density functional calculation
Journal title
Computational Materials Science
Serial Year
2002
Journal title
Computational Materials Science
Record number
1679256
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