• Title of article

    Measurement of Sb diffusion using shadow profiles created by a STM tip

  • Author/Authors

    Voigtlنnder، نويسنده , , Bert and Kنstner، نويسنده , , Martin، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2000
  • Pages
    14
  • From page
    131
  • To page
    144
  • Abstract
    The diffusion of a nanostructured Sb layer on Si(111) was measured at room temperature. We used the tip of a scanning tunneling microscope (STM) as a shadow mask to create a nanostructured Sb film by deposition from a molecular beam. The profiles of the shadow edges were measured as a function of Sb layer thickness. We observed: (i) an Sb layer outside the shadow region, which is rough on a length scale of 100 إ; and (ii) diffusion of Sb several hundred إngstroms in the shadow. This can be explained consistently by a highly diffusive Sb precursor which decays and becomes immobile after a certain lifetime. Kinetic Monte Carlo calculations including only one fit parameter (the decay time) describe the form and the width of the measured shadow edge profiles.
  • Keywords
    Scanning tunneling microscopy , Semiconductor–semiconductor thin film structures , SELF-ASSEMBLY , Silicon , epitaxy , Germanium , Nucleation , Molecular Beam Epitaxy
  • Journal title
    Surface Science
  • Serial Year
    2000
  • Journal title
    Surface Science
  • Record number

    1679400