Author/Authors :
NABILA IHADDADENE، نويسنده , , M. and Marcon، نويسنده , , J. and Idrissi-Benzohra، نويسنده , , M. and Ketata، نويسنده , , K. and Demichel، نويسنده , , S. and Flicstein، نويسنده , , J. and Pelouard، نويسنده , , J.L. and Ketata، نويسنده , , M.، نويسنده ,
Abstract :
Phosphorus and beryllium have been coimplanted in InGaAs. Various anneals have been performed in the temperature range of 745–826 °C. The secondary ion mass spectrometry measurements have revealed anomalous redistribution of the beryllium dopant: “up-hill” Be diffusion profiles have been observed. The observations of as-implanted profiles suggest that these anomalous beryllium peaks are due to beryllium trapping by the extended defects generated by the P implantation. A good agreement has been obtained between the experimental data and simulated profiles.
Keywords :
Implantation , diffusion , InGaAs , Phosphorus , Beryllium , Defects
