Title of article
Transformation kinetics of homoepitaxial islands on GaAs(001)
Author/Authors
Itoh، نويسنده , , M. and Bell، نويسنده , , G.R. and Joyce، نويسنده , , B.A. and Vvedensky، نويسنده , , D.D.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2000
Pages
11
From page
200
To page
210
Abstract
Kinetic Monte Carlo simulations, in situ scanning tunneling microscopy, and mean-field rate equations are used to characterize the atomistic nucleation, growth, and structural transformation kinetics of homoepitaxial islands on GaAs(001)-(2×4). After an induction period, islands are formed that do not adopt the reconstruction of the substrate, but transform into β2(2×4) structures as they grow. Comparison of measured and simulated island statistics at several coverages reveals that the unreconstructed islands initially grow slowly in size and rapidly in number, whereas the transformed islands have an appreciably higher growth rate but appear much more gradually.
Keywords
surface structure , Roughness , morphology , Gallium arsenide , Models of surface kinetics , Scanning tunneling microscopy , Nucleation , Low index single crystal surfaces , and topography , Monte Carlo simulations , epitaxy
Journal title
Surface Science
Serial Year
2000
Journal title
Surface Science
Record number
1679416
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