Title of article :
266 nm pulsed laser-induced oxygen atoms desorbed from 873 K high temperature, high vacuum pretreated rutile TiO2
Author/Authors :
Xu، نويسنده , , Can and Arita، نويسنده , , Toshiyuki and Tanaka، نويسنده , , Katsumi and Nakata، نويسنده , , Rhouhei Nakata، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2000
Pages :
10
From page :
191
To page :
200
Abstract :
Desorption of neutral oxygen atoms induced by 266 nm laser pulses from pressure pressed as-prepared (AP) sample and from high temperature (873 K, 40 h) pretreated (HT) sample is investigated by time-of-flight (TOF) mass spectrometric analysis. The obtained TOF data are analyzed by Maxwell–Boltzmann energy distributions. It is concluded that desorption of neutral oxygen atoms occurs from oxygen defect sites via photochemical processes, followed by some subsequent thermal quenching processes. Kinetic energies of desorbed species are reflected by the sub-band structure in the band gap of TiO2. Band gap energies of the AP sample and the HT sample are estimated to be 2.02 and 2.37 eV, respectively, in accordance with values obtained from previous theoretical calculations. The surface of the HT sample was studied with ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS) to elucidate laser irradiation effects.
Keywords :
Semiconducting surfaces , Desorption induced by photon stimulation , Titanium oxide , Surface defects , photochemistry , Photoelectron spectroscopy
Journal title :
Surface Science
Serial Year :
2000
Journal title :
Surface Science
Record number :
1679620
Link To Document :
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