• Title of article

    Desorption of SiO molecule from the Si(1 0 0) surface

  • Author/Authors

    Uchiyama، نويسنده , , Toshihiro and Uda، نويسنده , , Tsuyoshi and Terakura، نويسنده , , Kiyoyuki، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2001
  • Pages
    7
  • From page
    21
  • To page
    27
  • Abstract
    We have studied the desorption of SiO molecule from the Si(1 0 0) surface at small oxygen coverage using the first-principles molecular dynamics. By calculating the total energies of possible oxygen adsorbed states and energy barriers among them, we determine the intermediates from which SiO molecules are desorbed with activation energies of 3.6–3.8 eV. This clarifies the nature of the slow process observed in the modulated molecular beam experiments. We present some pieces of evidence showing that the fast process is related to adsorption of molecular oxygens.
  • Keywords
    Etching , Silicon , Low index single crystal surfaces , Density functional calculations , Oxidation
  • Journal title
    Surface Science
  • Serial Year
    2001
  • Journal title
    Surface Science
  • Record number

    1679890