• Title of article

    Development of vapor phase decomposition-total-reflection X-ray fluorescence spectrometer

  • Author/Authors

    Yamagami، نويسنده , , Motoyuki and Ikeshita، نويسنده , , Akihiro and Onizuka، نويسنده , , Yoshinobu and Kojima، نويسنده , , Shinjiro and Yamada، نويسنده , , Takashi، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2003
  • Pages
    6
  • From page
    2079
  • To page
    2084
  • Abstract
    A total reflection X-ray fluorescence spectrometer integrated with vapor phase decomposition, VPD-TXRF, was newly developed. This instrument was designed to achieve a minimum footprint, to avoid cross contamination during operation, and to protect people and instruments from HF gas. Comparisons between analysis by VPD-TXRF and by atomic absorption spectrometry (AAS) indicated very good agreement in a wide range, from 108 to 1012 atoms/cm2. The lower limits of detection (LLDs) were improved by two orders of magnitude compared with straight TXRF. For 300-mm Si wafers, the LLDs were 5×108 atoms/cm2 and 1×107 atoms/cm2 for Al and Ni, respectively. VPD-TXRF was able to perform ultra-trace analysis at the level of 108 atoms/cm2.
  • Keywords
    Total-reflection X-ray fluorescence (TXRF) , Metal contamination , Vapor phase decomposition (VPD) , Metrology tool , Silicon wafer
  • Journal title
    Spectrochimica Acta Part B Atomic Spectroscopy
  • Serial Year
    2003
  • Journal title
    Spectrochimica Acta Part B Atomic Spectroscopy
  • Record number

    1679956