• Title of article

    STM, STS, and local work function study of Cs/p-GaAs(1 1 0)

  • Author/Authors

    Yamada، نويسنده , , T. and Fujii، نويسنده , , J. and Mizoguchi، نويسنده , , T.، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2001
  • Pages
    10
  • From page
    33
  • To page
    42
  • Abstract
    Various surface configurations of Cs/p-GaAs(1 1 0) have been studied by scanning tunneling microscopy and scanning tunneling spectroscopy with an interest in relation to the photoelectron emission. The local work function is found to be 4.8, 3.3, and 3.3 eV from clean p-GaAs(1 1 0), Cs one-dimensional (1D) lines (Cs coverage of 0.23 ML), and partially-ordered Cs polygons (Cs coverage of 0.5 ML), respectively. It is understood that only a coherently c(4×4)-ordered Cs-polygon surface (Cs coverage of 0.6 and 0.7 ML) can emit photoelectrons due to a sufficient reduction of the local work function down to 1.3 eV to get the negative electron affinity state. The local work function image shows that the boundary of Cs atoms has a lower local work function than at the top of Cs atoms.
  • Keywords
    Photoemission (total yield) , Work function measurements , Scanning tunneling microscopy , Scanning tunneling spectroscopies , Photoelectron emission , Gallium arsenide , Low index single crystal surfaces , alkali metals
  • Journal title
    Surface Science
  • Serial Year
    2001
  • Journal title
    Surface Science
  • Record number

    1680174