Title of article
STM, STS, and local work function study of Cs/p-GaAs(1 1 0)
Author/Authors
Yamada، نويسنده , , T. and Fujii، نويسنده , , J. and Mizoguchi، نويسنده , , T.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2001
Pages
10
From page
33
To page
42
Abstract
Various surface configurations of Cs/p-GaAs(1 1 0) have been studied by scanning tunneling microscopy and scanning tunneling spectroscopy with an interest in relation to the photoelectron emission. The local work function is found to be 4.8, 3.3, and 3.3 eV from clean p-GaAs(1 1 0), Cs one-dimensional (1D) lines (Cs coverage of 0.23 ML), and partially-ordered Cs polygons (Cs coverage of 0.5 ML), respectively. It is understood that only a coherently c(4×4)-ordered Cs-polygon surface (Cs coverage of 0.6 and 0.7 ML) can emit photoelectrons due to a sufficient reduction of the local work function down to 1.3 eV to get the negative electron affinity state. The local work function image shows that the boundary of Cs atoms has a lower local work function than at the top of Cs atoms.
Keywords
Photoemission (total yield) , Work function measurements , Scanning tunneling microscopy , Scanning tunneling spectroscopies , Photoelectron emission , Gallium arsenide , Low index single crystal surfaces , alkali metals
Journal title
Surface Science
Serial Year
2001
Journal title
Surface Science
Record number
1680174
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