Title of article
Comparative study of the epitaxial growth of Cu on MgO(0 0 1) and on hydrogen terminated Si(0 0 1)
Author/Authors
Mewes، نويسنده , , M. Rickart and D. I. Kholin ، نويسنده , , M and Mougin، نويسنده , , S. O. Demokritov، نويسنده , , S.O and Fassbender، نويسنده , , B. Hillebrands and H. Benner ، نويسنده , , B and Scheib، نويسنده , , M، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2001
Pages
10
From page
87
To page
96
Abstract
A comparative study combining diffraction and scanning probe techniques of the epitaxial growth of Cu on hydrogen terminated Si(0 0 1) and on MgO(0 0 1) is reported. In the case of Cu on Si(0 0 1) a three dimensional growth mode with typical island dimensions of 10 nm is found. Growth of Cu on MgO(0 0 1) also yields a three dimensional growth. In order to achieve a flat Cu surface two different seed layer systems are investigated: Pt and Fe/Pt. In the case of Pt the Cu layer grows in (1 1 1)-orientation. Using a Fe/Pt seed layer system a smooth Cu(0 0 1) film is obtained, which is further improved in flatness by a short annealing procedure.
Keywords
Metallic films , Magnesium oxides , Platinum , Copper , Metal–semiconductor nonmagnetic thin film structures , Molecular Beam Epitaxy , Silicon , Iron
Journal title
Surface Science
Serial Year
2001
Journal title
Surface Science
Record number
1680300
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