Title of article :
Migration of Si adatom on strained Si(1 1 1) surfaces
Author/Authors :
Hoshino، نويسنده , , T. and Hata، نويسنده , , M. and Tsuda، نويسنده , , M.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2001
Abstract :
Quantum chemical calculations were performed to indicate the lowest energy path and the activation energy for Si adatom diffusion on a Si(1 1 1) surface and to evaluate the dependency of the activation energy on strains imposed on the Si surface. The activation energy barrier for the adatom diffusion was estimated to be 0.8 eV for a non-strained surface. The energy barrier increases on Si surfaces under compressive strain and, conversely, decreases under tensile strain. However, the energy variations are only within 0.1 eV under strains ranging between ±1%. The influence of strain on the 7×7 reconstruction is discussed in light of these theoretical results.
Keywords :
Ab initio quantum chemical methods and calculations , surface diffusion , Silicon , Low index single crystal surfaces , Adatoms , Single crystal surfaces
Journal title :
Surface Science
Journal title :
Surface Science