Application of total reflection X-ray photoelectron spectroscopy to boron and phosphorus on Si wafer surface measurement

A study is made on the chemical bonding state analysis of B and P injected into a Si wafer by means of the total reflection XPS (TRXPS) method. Inelastic scattering electrons forming a strong background of photoelectron spectrum can remarkably be reduced in TRXPS. The measurement of a small amount of B and P (<1012 atom cm−2) on the Si wafer by TRXPS shows that SiB4 is formed on the Si wafer. Organic phosphorus compounds originated from the contamination in a clean room and P2O5 are additionally found. It is demonstrated that the TRXPS is a very effective analysis method for semiconductor surface analysis.