Title of article
Effects of H2O on Si fracture: a hybrid quantum-classical simulation
Author/Authors
Belkada، نويسنده , , R and Igarashi، نويسنده , , T and Ogata، نويسنده , , S، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
7
From page
195
To page
201
Abstract
The mechanism of stress corrosion cracking in Si has became recently important, because it occurs in micro-machines. A novel hybrid quantum-mechanical/molecular-dynamics simulation code developed recently for parallel computers is used to perform simulations for a cracked Si-model under tension (mode-I opening) with three H2O molecules around the crack front to investigate possible effects of both, saturation of dangling bonds of Si with hydrogen atoms and environment molecules on the fracture initiation. Our results demonstrate formation of Si–O–Si bond by chemical reaction, which occurs at the crack tip after dissociation of O atom from H2O molecule. Moreover, the reaction exhibits no energy barrier and the hydrogen saturation has no effect on H2O molecule pathway.
Keywords
Molecular dynamics , Stress corrosion cracking , Hybrid simulation , Density functional theory , Silicon , Static Fatigue , Multiscale simulation
Journal title
Computational Materials Science
Serial Year
2004
Journal title
Computational Materials Science
Record number
1680435
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