Title of article
Surface decomposition of triethylindium on InSb(1 0 0)
Author/Authors
Yong، نويسنده , , K and Ekerdt، نويسنده , , J.G، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2001
Pages
7
From page
13
To page
19
Abstract
The surface reactions of triethylindium on InSb(1 0 0)-c(8×2) were studied using temperature programmed desorption (TPD) and static secondary ion mass spectroscopy. Adsorbed diethylindium, monoethylindium and ethyl were the main surface products after triethylindium chemisorbed at 350 K. Diethylindium desorbs from the surface at temperatures below 450 K. Ethyl groups undergo hydride elimination to ethylene and homolysis to ethyl radicals at two temperatures during TPD, 450 and 480 K. The 450 K desorption feature is associated with adsorbed monoethylindium. Adsorbed ethyl ligands, formed during dissociative adsorption, migrate to lattice In atoms and desorb at 480 K through homolysis and β-hydride elimination at these lattice sites.
Keywords
Surface chemical reaction , Indium antimonide , Thermal desorption spectroscopy , Secondary ion mass spectroscopy
Journal title
Surface Science
Serial Year
2001
Journal title
Surface Science
Record number
1680606
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