Title of article
Stability of sulfur induced reconstructions on InP(0 0 1) surfaces
Author/Authors
Engler، نويسنده , , C and Dittmar، نويسنده , , J and Chassé، نويسنده , , T، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2001
Pages
13
From page
55
To page
67
Abstract
We have performed quantum chemical calculations based on density functional theory on different surface structures modeling the sulfur treated InP(0 0 1) surface. The models were selected to explain new experimental results from electron diffraction and photoelectron emission, where a phase transition from a low temperature sulfur-rich InP(0 0 1):S (2×1)A-phase to a high temperature sulfur-poor InP(0 0 1):S (2×1)B-phase was observed. The energetic stability of models with different stoichiometry is compared by calculation of thermodynamic phase diagrams.The most probable candidate for the low temperature sulfur-rich structure seems to be a model which involves 0.5 monolayer (ML) sulfur in a PS-mixed-dimer on the surface, 1 ML sulfur inserted on phosphorus sites in the second layer and 0.5 ML sulfur inserted on phosphorus sites in the fourth layer. Additionally, one In-vacancy per (2×1) unit cell in the third layer has to be created to fulfil the electron counting rule. The sulfur-poor surface structure has only one sulfur component (0.5 ML). From the energetic point of view a model with InS-mixed-dimers on the surface is slightly favored in comparison with a model, where the surface sulfur in the InS-dimer is exchanged with phosphorus in the second layer.
Keywords
Chemisorption , Sulphur , Indium phosphide , morphology , Low index single crystal surfaces , and topography , Density functional calculations , Roughness , surface structure
Journal title
Surface Science
Serial Year
2001
Journal title
Surface Science
Record number
1680778
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