Application of X-ray standing wave (XSW) technique for studies of Zn incorporation in InP epilayers

We present a new approach to determine the site incorporation of p-type impurities in the doped layers of microelectronic device structures based on X-ray standing wave (XSW) technique. Activation behavior of Zn in InP epitaxial layers grown by metal organic vapor phase epitaxy (MOVPE) on InP(1 0 0) substrates has been studied. The XSW experiments were performed at the A2 beamline of the Cornell high-energy synchrotron source (CHESS). Angular dependences of the Zn–K fluorescence intensity excited by the XSW field inside the InP layer for symmetrical (4 0 0) reflection have been measured along with the Indium L-edge and phosphorus K-edge fluorescence and X-ray reflectivity. Analysis of the XSW data based on the dynamical diffraction theory in layered crystal structures allowed us to determine the fractions of both Zn atoms incorporated into crystal lattice and interstitial Zn. In our example, a 1 μm thick MOCVD-grown InP layer with the nominal concentration of Zn atoms of (2.4 ± 0.2) × 1018 cm−3 has the fraction of the substitutional Zn of (65 ± 5)%. This result is in a good agreement with electrical activation of Zn measured with a combination of SIMS and CV profilometry. The accurate knowledge of the interstitial-to-substitutional ratio as a function of growth conditions is required to optimize electrical activation of Zn and to control its diffusion in the device structures.