Title of article
Local vibrational modes of Zn–H–As defects in GaAs, ZnSe and ZnTe
Author/Authors
Torres، نويسنده , , V.J.B. and Coutinho، نويسنده , , J. and Briddon، نويسنده , , P.R.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
3
From page
145
To page
147
Abstract
The hydrogenation of the zinc acceptor in GaAs (ZnGa), and As acceptor in ZnSe (AsSe) and in ZnTe (AsTe), is studied by computer modeling using an ab initio pseudopotential density-functional method. We found that the lowest energy location for hydrogen is nearly bond-centered (closer to As) between Zn and As atoms. Also for GaAs:ZnH, ZnSe:AsH and ZnTe:AsH, antibonding As–H units were found to be metastable by 0.4, 0.5 and 0.7 eV, respectively. The calculated local vibrational modes and deuterium isotopic shifts agree within less than 4% of the experimental data. The correct ordering of the As–H stretch modes in GaAs and ZnSe is only reproduced when anharmonic effects are taken into account.
Journal title
Computational Materials Science
Serial Year
2005
Journal title
Computational Materials Science
Record number
1680790
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