Title of article :
Local vibrational modes of Zn–H–As defects in GaAs, ZnSe and ZnTe
Author/Authors :
Torres، نويسنده , , V.J.B. and Coutinho، نويسنده , , J. and Briddon، نويسنده , , P.R.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Abstract :
The hydrogenation of the zinc acceptor in GaAs (ZnGa), and As acceptor in ZnSe (AsSe) and in ZnTe (AsTe), is studied by computer modeling using an ab initio pseudopotential density-functional method. We found that the lowest energy location for hydrogen is nearly bond-centered (closer to As) between Zn and As atoms. Also for GaAs:ZnH, ZnSe:AsH and ZnTe:AsH, antibonding As–H units were found to be metastable by 0.4, 0.5 and 0.7 eV, respectively. The calculated local vibrational modes and deuterium isotopic shifts agree within less than 4% of the experimental data. The correct ordering of the As–H stretch modes in GaAs and ZnSe is only reproduced when anharmonic effects are taken into account.
Journal title :
Computational Materials Science
Journal title :
Computational Materials Science