Growth nuclei and surface defects on GaAs(1̄ 1̄ 3̄)B

Growth nuclei and surface defects are studied with scanning tunneling microscopy on the GaAs(1̄ 1̄ 3̄)B(8×1) surface prepared by molecular beam epitaxy. Besides steps, three types of distortions of the (8×1) reconstructed surface are found. First, there are growth nuclei formed by small cluster of Ga and As atoms. Second, there are zig–zigzag or zigzag–zag irregularities in the zigzag chains of the (8×1) reconstruction. Third, complete zigzag chains are added or removed. Based on the analysis of these surface defects, the epitaxial growth on the GaAs(1̄ 1̄ 3̄)B(8×1) surface is discussed.