Title of article :
Flat-band excitonic states in Kagome lattice on semiconductor surfaces
Author/Authors :
Ishii، نويسنده , , H. and Nakayama، نويسنده , , T. K. Inoue، نويسنده , , J.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2002
Abstract :
Excitonic properties in the Kagome lattice system, which is produced by quantum wires on semiconductor surfaces, are investigated by using the exact diagonalization of a tight binding model. It is shown that due to the existence of flat bands the binding energy of exciton becomes remarkably large in the two-dimensional Kagome lattice compared to that in one-dimensional lattice, and the exciton Bohr radius is quite small as large as a lattice constant. We also discuss the magnetic field effects on the exciton binding energy and the stability of exciton against the creation of charged exciton and biexciton.
Keywords :
Surface electronic phenomena (work function , Surface potential , Surface states , etc.) , Work function measurements , electron density , excitation spectra calculations , Gallium arsenide , Semiconducting surfaces , quantum effects , Indium arsenide , Semi-empirical models and model calculations , Quantum wells
Journal title :
Surface Science
Journal title :
Surface Science