• Title of article

    Cs doping effects on electronic structure of thin nanotubes

  • Author/Authors

    Khazaei، نويسنده , , Mohammad and Farajian، نويسنده , , Amir A. and Mizuseki، نويسنده , , Hiroshi and Kawazoe، نويسنده , , Yoshiyuki، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2006
  • Pages
    7
  • From page
    152
  • To page
    158
  • Abstract
    Using ab initio density functional simulations, we investigate the localization of energy states and the changes of the electronic structures in pristine and Cs-doped cap and stem (5, 5) nanotubes. Although the pristine capped structure has a semiconducting character, the doped capped structures are metallic. For the (5, 5) stem, the dangling bonds created as a result of Cs collisions result in generation of extra states within the pseudogap, such that the density of states at Fermi energy is increased. The localization of the states near the Fermi energy at the cap, and the reduction of the work functions of Cs-doped capped structures make them suitable for field emission.
  • Keywords
    Carbon nanotube , Field emission , Adsorption , cesium
  • Journal title
    Computational Materials Science
  • Serial Year
    2006
  • Journal title
    Computational Materials Science
  • Record number

    1681559