• Title of article

    Clustering effects in a low coverage deposition of gold on the GaAs(0 0 1)-β2(2×4) surface: an STM–UHV and theoretical study

  • Author/Authors

    Aldo Amore Bonapasta، نويسنده , , A and Scavia، نويسنده , , G and Buda، نويسنده , , F، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2002
  • Pages
    12
  • From page
    53
  • To page
    64
  • Abstract
    A comparative study of gold deposition on the GaAs(0 0 1)-β2(2×4) surface based on scanning tunneling microscopy (STM)–ultra high vacuum (UHV) and Car–Parrinello calculations has been carried out. The theoretical results show that the preferential reactive sites of an isolated Au adatom on the GaAs surface drive a self-organizing process of further Au adatoms onto the surface, thus determining an Au clusterization onto the two-As-dimer cell. On the other hand, STM–UHV images reveal, for Au depositions <1 ML, a decorating effect of gold towards the GaAs(0 0 1)-β2(2×4) unit cell. In detail, gold clusters tend to cover the two-As-dimer cell without modifying the (2×4) reconstruction, in agreement with the theoretical results. Moreover, a fine comparison between the STM images of gold clusters and the theoretical results reveals that each of these clusters can be composed of four Au adatoms directly interacting with the two As dimers of the GaAs unit cell. An STM–UHV analysis of the surface for a deposition >1 ML suggests that gold clusterizes into 3D clusters rather than forming a 2D layer.
  • Keywords
    Density functional calculations , Scanning tunneling microscopy , Metal–semiconductor interfaces , Gold , Gallium arsenide
  • Journal title
    Surface Science
  • Serial Year
    2002
  • Journal title
    Surface Science
  • Record number

    1681747