Title of article
Investigations of MBE grown InN and the influence of sputtering on the surface composition
Author/Authors
Krischok، نويسنده , , S. and Yanev، نويسنده , , V. and Balykov، نويسنده , , O. and Himmerlich، نويسنده , , Luiene M. and Schaefer، نويسنده , , J.A. and Kosiba، نويسنده , , R. and Ecke، نويسنده , , G. and Cimalla، نويسنده , , I. and Cimalla، نويسنده , , V. and Ambacher، نويسنده , , O. and Lu، نويسنده , , H. V. Schaff، نويسنده , , W.J. and Eastman، نويسنده , , L.F.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2004
Pages
7
From page
849
To page
855
Abstract
In this study InN films with wurtzite structure grown by plasma induced molecular beam epitaxy were investigated by X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), Auger electron spectroscopy (AES), and electron energy loss spectroscopy (EELS) in order to determine the chemical composition of the sample surfaces before and after ion bombardment. Samples which were investigated without any cleaning procedures showed some contaminations (O and C) due to the previous exposure to air. The ratio between In and N was examined by XPS. The surface contaminations were removed by bombarding the surface with Ar+ ions (Ekin=500 eV). Due to preferential sputtering an In rich surface is formed. The degree of In enrichment is strongly dependent on the incident angle of the ions.
Keywords
Electron energy loss spectroscopy (EELS) , Auger electron spectroscopy , Photoelectron spectroscopy , Molecular Beam Epitaxy , nitrides
Journal title
Surface Science
Serial Year
2004
Journal title
Surface Science
Record number
1682194
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