Title of article :
S and O adsorption on pure and Ge doped Ag(1 1 1)
Author/Authors :
Blomqvist، نويسنده , , J. and Salo، نويسنده , , P. and Alatalo، نويسنده , , M.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2004
Pages :
4
From page :
1067
To page :
1070
Abstract :
We have studied the possibility of preventing the sulphur poisoning of silver surfaces by doping them with Ge. Our first principles calculations show that the presence of Ge at the topmost surface layer does not affect the adsorption characteristics of S much, yet Ge helps to bind oxygen much more strongly. We thus predict that Ge doping induces a protective O layer which helps to prevent the poisoning caused by sulphur.
Keywords :
computer simulations , Density functional calculations , Oxygen , Sulphur , Surface electronic phenomena (work function , etc.) , surface structure , silver , morphology , Roughness , Adatoms , and topography , Surface potential , Surface states
Journal title :
Surface Science
Serial Year :
2004
Journal title :
Surface Science
Record number :
1682275
Link To Document :
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