Title of article
The combined study of the organosilicon films by RBS, ERDA and AFM analytical methods obtained from PECVD and PACVD
Author/Authors
Mackova، نويسنده , , A. and Perina، نويسنده , , V. and Stryhal، نويسنده , , Z. and Pavlik، نويسنده , , J. and Svec، نويسنده , , M. and Quédé، نويسنده , , A. and Supiot، نويسنده , , P. and Borvon، نويسنده , , G. and Granier، نويسنده , , A. and Raynaud، نويسنده , , P.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2004
Pages
4
From page
1143
To page
1146
Abstract
Organosilicon plasma deposited polymers are of interest for different kinds of applications like packaging, passivation and dielectric layers. A large set of plasma processes is possible, among which are low-pressure plasma enhanced chemical vapour deposition (PECVD) and plasma assisted chemical vapour deposition (PACVD) often used. In this work, we studied the composition and surface morphology of the hexamethyldisiloxane (HMDSO) and tetramethyldisiloxane (TMDSO) layers produced by PECVD and PACVD deposition using three plasma generation processes (plasma reactors): RF inductively coupled plasma (RFICP), microwave distributed electron cyclotron resonance plasma (DECR) and microwave induced remote nitrogen afterglow (MIRA). The layer composition was investigated by Rutherford backscattering spectrometry (RBS) and by elastic recoil detection analysis (ERDA) and the layer surface morphology was determined by atomic force microscopy (AFM). Composition, density and morphology (roughness, porosity) of the layers is discussed in connection with deposition techniques used.
Keywords
Plasma processing , Silicon , Ion scattering spectroscopy , chemical vapor deposition
Journal title
Surface Science
Serial Year
2004
Journal title
Surface Science
Record number
1682312
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