Title of article :
Ab initio study of structural, electronic, elastic and high pressure properties of barium chalcogenides
Author/Authors :
Bouhemadou، نويسنده , , A. and Khenata، نويسنده , , R. and Zegrar، نويسنده , , F. and Sahnoun، نويسنده , , M. and Baltache، نويسنده , , H. and Reshak، نويسنده , , A.H.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Pages :
8
From page :
263
To page :
270
Abstract :
A theoretical studies of structural, electronic, elastic and high pressure properties in barium chalcogenides BaX (X = S, Se, Te, Po) are performed, using the full-potential augmented plane wave plus local orbitals method (FP-APW + lo). In this approach the local-density approximation (LDA) and generalized gradient approximation (GGA) are used for the exchange-correlation (XC) potential. Moreover, the alternative form of GGA proposed by Engel and Vosko (GGA-EV) is also used for band structure calculations. The equilibrium lattice constant and the bulk modulus agree well with the experiments. The pressures at which these compounds undergo structural phase transition from NaCl (B1) to CsCl (B2) phase were found to be in good agreement with the available experimental data. Results obtained for band structure using GGA-EV show a significant improvement over other theoretical work and are closer to the experimental data. A linear relationship is observed between theoretical band gap and 1/a2 (where a is lattice constant).We have determined the elastic constants C11, C12 and C44 at ambient conditions in both B1 and B2 structures, which have not been established neither experimentally nor theoretically. Further, we have also calculated the pressure dependence of the elastic constants for the B1 structure of the four compounds.
Keywords :
Semiconductors , Barium chalcogenides , FP-LAPW , GGA-EV , phase transition , elastic constants , Electronic structure
Journal title :
Computational Materials Science
Serial Year :
2006
Journal title :
Computational Materials Science
Record number :
1682386
Link To Document :
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