Title of article :
Well-ordered (1 0 0) InAs surfaces using wet chemical treatments
Author/Authors :
Tereshchenko، نويسنده , , O.E. and Placidi، نويسنده , , E. and Paget، نويسنده , , D. and Chiaradia، نويسنده , , P. and Balzarotti، نويسنده , , A.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2004
Pages :
8
From page :
237
To page :
244
Abstract :
Atomic ordering of HCl-isopropanol (HCl-iPA) treated and vacuum annealed (1 0 0) InAs surfaces was studied by scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), and reflectance anisotropy spectroscopy (RAS). On the as-treated surface, a diffused (1 × 1) pattern is observed, which successively evolves to the β2(2 × 4)/c(2 × 8) and (4 × 2)/c(8 × 2) ones after annealing to 330 °C and 410 °C, respectively. At the intermediate temperature of 370 °C, an α2(2 × 4)/(4 × 2) mixed reconstruction is observed. Reflectance anisotropy spectra are compared with those of the corresponding reconstructions observed after As-decapping and found to be quite similar. Therefore we conclude that high-quality (1 0 0) InAs surfaces can be obtained by wet chemical treatment in an easy, inexpensive and practical way.
Keywords :
Indium arsenide , Gallium arsenide , surface structure , morphology , Roughness , and topography , Scanning tunneling microscopy , Low energy electron diffraction (LEED) , Reflection spectroscopy
Journal title :
Surface Science
Serial Year :
2004
Journal title :
Surface Science
Record number :
1682387
Link To Document :
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