Title of article
Yb and Nd growth on Si(0 0 1)
Author/Authors
Katkov، نويسنده , , M.V. and Nogami، نويسنده , , J، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2003
Pages
8
From page
129
To page
136
Abstract
The growth behavior of Yb and Nd on Si(0 0 1) was studied using scanning tunneling microscopy and low-energy electron diffraction. At low coverage, 2×3 and 2×4 surface reconstructions were obtained for both the elements, as well as a 6×2 phase which prevails at intermediate coverage. Above 1.2 monolayers, the substrate showed 3×1 periodicity, and two different classes of 3D islands were observed for both Nd and Yb.
Keywords
Scanning tunneling microscopy , surface structure , morphology , Roughness , and topography , Lanthanides , Silicides , Silicon
Journal title
Surface Science
Serial Year
2003
Journal title
Surface Science
Record number
1682791
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