Title of article :
Electric field effects on surface dynamics: Si ad-dimer diffusion and rotation on Si(0 0 1)
Author/Authors :
Mattsson، نويسنده , , Thomas R. and Swartzentruber، نويسنده , , B.S. and Stumpf، نويسنده , , Roland and Feibelman، نويسنده , , Peter J.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2003
Abstract :
Density functional calculations show that the electric field effect on Si ad-dimer diffusion on Si(0 0 1) is largely a reflection of the position dependence of the ad-dimer’s dipole moment. Surface diffusion barriers’ dependence on perpendicular electric fields can be used to discriminate between diffusion mechanisms. Since the previously accepted mechanism for ad-dimer diffusion on Si(0 0 1) has the opposite field dependence to what is observed, it cannot be the one that dominates mass-transport. We identify an alternate process, with a similar barrier at zero electric field and field dependence in agreement with measurements. For rotation, calculations to date show linear field dependence, in contrast to experiments.
Keywords :
Density functional calculations , surface diffusion , Silicon , Scanning tunneling microscopy
Journal title :
Surface Science
Journal title :
Surface Science