Title of article :
Electronic structure of the filled tetrahedral compound LiCdP and zinc–blende InP: Application of the interstitial insertion rule
Author/Authors :
Kalarasse، نويسنده , , F. and Bennecer، نويسنده , , B. and Mellouki، نويسنده , , A. and Kalarasse، نويسنده , , L.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2008
Pages :
5
From page :
791
To page :
795
Abstract :
We report on first principles studies of the electronic properties of the filled tetrahedral compound LiCdP and zinc–blende InP, using the full potential linearized augmented plane wave method within the local density approximation. The total energy calculations show that the α phase ( Li + near the anion) to be more stable than the β one ( Li + near the cation) for the LiCdP. The conduction band valleys follow the Γ–L–X ordering of increasing energy for β-LiCdP and InP, and the Γ–X–L one for α–LiCdP. The conduction band modifications are discussed and found to obey the interstitial insertion rule except for the Γ state of β-LiCdP. The valence charge density analysis shows that the Cd–P bond is covalent whereas the Li–P and the Li–Cd ones in α and β phases, respectively, are ionic.
Keywords :
C. ab initio calculations , A. Semiconductors , D. Electronic properties
Journal title :
Computational Materials Science
Serial Year :
2008
Journal title :
Computational Materials Science
Record number :
1683677
Link To Document :
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