Author/Authors :
Agnoli، نويسنده , , S. and Castellarin-Cudia، نويسنده , , C. and Sambi، نويسنده , , M. and Surnev، نويسنده , , David S. L. Ramsey، نويسنده , , M.G. and Granozzi، نويسنده , , G. and Netzer، نويسنده , , F.P.، نويسنده ,
Abstract :
The initial stages of the growth of vanadium overlayers on TiO2(1 1 0) at room temperature have been investigated with scanning tunneling microscopy. At very low coverages both individual vanadium adatoms and small vanadium clusters have been imaged with good resolution. The V adatoms adsorb preferentially on the so-called “upper threefold hollow” sites, as revealed by atomically resolved STM images: they are thus bonded to two bridging oxygen atoms and one threefold coordinated basal oxygen atom. At higher coverages the vanadium adlayers grow in form of poorly ordered three-dimensional islands. The number of V clusters at low coverages decreases by gentle annealing or with time even at room temperature. This kinetic effect has been interpreted in terms of sub-surface migration of V adatoms.
Keywords :
vanadium , Titanium oxide , Scanning tunneling microscopy , Adsorption kinetics , growth