Influence of Ge content on formation of radiation defects in Si1−xGex solid solutions

The process of radiation defect formation in bulk Si1−xGex alloy was investigated taking into account the dependence of introduction rates of primary radiation defects on the content of Ge and intensity of irradiation. A new expression was obtained which describes the dependence of divacancy concentration in Si1−xGex alloy at various introduction rates of primary radiation defects under electron, thermal and fast neutron irradiation.