Surface morphology and structure of the bare and InAs-covered GaAs(3̄ 1̄ 5̄)B surface

Morphology and structure of the GaAs(3̄ 1̄ 5̄)B surface were investigated under Ga- and As-rich conditions. On atomic scale the Ga-rich surface is not flat, but exhibits a very anisotropic surface morphology. Narrow stripes of 1 × 1 structure extend along [1 2 1̄]. The steps between the stripes often bunch together thus creating (1̄ 0 1̄) facets. The As-rich surface is also not flat, but facets into vicinal (5̄ 2̄ 11)B surfaces with steps along the [1 3 1̄]proj. and [3̄ 2 1]proj.. (1̄ 0 1̄) facets form on the sidewall of the steps along the [1 3 1̄]proj.. In adsorbing a monoatomic layer of InAs the GaAs(3̄ 1̄ 5̄)B surface becomes flat, and exhibits a c(2 × 2) reconstruction.