Title of article
Tailoring surface electronic states via strain to control adsorption: O/Cu/Ru(0 0 0 1)
Author/Authors
Otero، نويسنده , , R. and Calleja، نويسنده , , F. and Garc??a-Su?rez، نويسنده , , V.M. and Hinarejos، نويسنده , , J.J. and de la Figuera، نويسنده , , J. and Ferrer، نويسنده , , J. and V?zquez de Parga، نويسنده , , A.L. and Miranda، نويسنده , , R.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2004
Pages
8
From page
65
To page
72
Abstract
A possible relationship between population of the surface electronic state and chemical reactivity for Cu layers on Ru(0 0 0 1) is revealed by tunneling spectroscopy and microscopy. The surface state shifts down in energy with increasing thickness. Ab initio calculations indicate that the energy shift can be assigned to the decreasing tensile strain of the deposited film. The reactivity of the surface towards oxygen correlates with the population of this state, reaching a maximum at Cu thicknesses where the surface state is empty. These data provides an indication of the effect of strain on the reactivity of metal surfaces.
Keywords
etc.) , Surface states , Density functional calculations , Copper , Scanning tunneling microscopy , Scanning tunneling spectroscopies , Chemisorption , sticking , Surface electronic phenomena (work function , Surface potential
Journal title
Surface Science
Serial Year
2004
Journal title
Surface Science
Record number
1684238
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