Pressure difference across the free surface of a stable static meniscus in a possible Ge1−XSiX ribbon growth by edge-defined film-fed growth (E.F.G.) technique

In this paper, it is shown in which kind the pressure difference across the free surface has to be chosen to obtain a stable convex static meniscus with a prescribed size in the case of a Ge1−XSiX single crystal ribbon growth by E.F.G. technique. The dependence of the pressure difference on the composition X is analyzed. The same tools as for a Ge or Si single crystal ribbon growth are used. The results can be useful in a future experiment planning or manufacturing technology design.