Title of article
Concentration effects on the Raman scattering of AlGaN/GaN superlattices
Author/Authors
Barros، نويسنده , , E.B. and Freire، نويسنده , , V.N. and Mendes Filho، نويسنده , , J. and Lemos، نويسنده , , V.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2004
Pages
7
From page
73
To page
79
Abstract
The calculation of the Raman spectra of AlxGa1−xN/GaN superlattices for the whole aluminum concentration range was performed in this work. The highest frequency modes are greatly influenced by the Al molar fraction. An interface with thickness varying in steps of one monolayer up to three was included. Severe changes in the middle frequency range of the Raman spectra are induced by the presence of interfaces. The changes in the atomic displacements and the phonon dispersion relations are discussed.
Keywords
Surface waves , computer simulations , Gallium nitride , superlattices , Semiconductor–semiconductor interfaces , phonons
Journal title
Surface Science
Serial Year
2004
Journal title
Surface Science
Record number
1684650
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